Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package

adsfTransphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency. The device’s low Rds(on) and ultra-low Qrr (175nC) bring the benefits of GaN to applications that previously relied on silicon, enabling engineers to achieve power-dense solutions with reduced component count and improved reliability in high-voltage power conversion applications.

The TPH3207 improves system reliability, performance and power density in an easy-to-handle cascode configuration. These advantages are being realized in hard-switched bridges and the continuous conduction mode (CCM) bridgeless totem-pole power factor correction (PFC) designs being used in on-board chargers, solar inverters, telecom power supplies and other power conversion applications. Transphorm’s GaN FET portfolio is also strengthened with the introduction of the TPH3208 family (130 mOhm) in industry-standard TO-220 and PQFN packages, further enabling the GaN revolution.

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