Schottky barrier rectifiers block 1.2 kV with low leakage

smugLittelfuse, Inc. has added two series to its expanding power semiconductor portfolio: the MBR Series Schottky Barrier Rectifiers (Standard Schottky) are the latest devices based on silicon Schottky diode technology; the DUR Series Ultrafast Rectifier provides ultrafast switching speed.

Both series are designed to meet the general requirements of commercial and industrial applications. They will be displayed among other Littelfuse products at China’s leading exhibition of electronic components, Electronica China, March 15-17, 2016, in Shanghai, in Booth No. 3522 (E3 Hall).

The Schottky Barrier Rectifiers are popular with designers because of their extremely fast switching speed, very low forward voltage drop, low leakage and high junction temperature capability; similarly, the DUR Series Ultrafast Rectifier is popular with designers because of their ultrafast switching speed with very low reverse recovery time (TRR), high blocking voltage (up to 1200V) and low leakage, and low forward voltage drop, which makes it possible to minimize power loss and increase efficiency during converter operation. Their higher junction temperature capability and low leakage provide higher reliability in harsh, high temperature environments.

Typical applications for MBR Series Schottky Barrier Rectifiers include uninterruptible power supplies, high frequency switch-mode power supplies and DC-DC converters, as well as use as free-wheeling diodes and polarity protection diodes. The DUR Series Ultrafast Rectifier addresses those applications, and can also be used as anti-parallel diodes for high frequency switching devices such as IGBTs. Other applications include inductive heating/melting and ultrasonic cleaners and welders.

“The MBR Series and DUR Series represent important new additions to the growing Littelfuse power semiconductor portfolio,” said Corey Deyalsingh, director of power control semiconductors at Littelfuse. “I’m confident they will help us add depth to our power semiconductor product offerings and expand our applications coverage.”

MBR Series and DUR Series Power Semiconductors offer these key benefits:
The MBR Series’ extremely fast switching speeds and DUR Series’ ultrafast switching speed and very low reverse recovery time make them suitable for high frequency applications with minimal switching loss.
The DUR Series’ high blocking voltage (up to 1200V) and low leakage makes it suitable for high voltage applications.
Both series offer very low forward voltage drop and less heat dissipation than conventional diodes, thereby reducing thermal and electrical conduction losses.
Their high junction temperature capability improves reliability in high ambient temperatures or applications with minimal cooling available.


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