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45nm Photomask Etch Technology

By Kathleen Zipp | April 18, 2007

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Applied Centura Tetra III Advanced Reticle Etch delivers vital nanomanufacturing technology required for etching 45nm photomasks. The Tetra III controls trench depths across quartz masks to <10Å and reduces critical dimension (CD) loss to <10nm-enabling the use of alternating phase shift mask (PSM) and aggressive optical proximity correction techniques in the most critical device layers. The system offers etch processes for chrome, quartz, molybdenum silicon oxynitride (MoSiON), and various new materials for next generation lithography applications.

“With its capability to etch the entire spectrum of photomask materials, the Tetra III system is well-positioned for all applications,” said Tom St. Dennis, senior vice president and general manager of Applied Materials' Etch, Cleans, Front End and Implant Products Groups.

With the Centura Tetra III system's ultra-clean and extendible platform, customers can etch the most advanced masks with the highest yields to date.

041707.Photo.AMAT-TetraIII_medium.jpg

For more information, visit www.appliedmaterials.com/products/photomask_etch_4.html.

Applied Materials
3050 Bowers Avenue
P. O. Box 58039
Santa Clara, CA 95054-3299 U. S.A.

Tel: 1-408-727-5555

About Applied Materials

Applied Materials, Inc. is a global leader in Nanomanufacturing Technology solutions with  innovative equipment, service and software products for the fabrication of semiconductor chips, flat panels, solar photovoltaic cells, flexible electronics, and energy efficient glass.


:: Design World ::


Filed Under: Semiconductor, Computer boards, Materials • advanced

 

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