Design World

  • Home
  • Technologies
    • 3D CAD
    • Electronics • electrical
    • Fastening & Joining
    • Factory automation
    • Linear Motion
    • Motion Control
    • Test & Measurement
    • Sensors
    • Fluid power
  • Learn
    • Ebooks / Tech Tips
    • Engineering Week
    • Future of Design Engineering
    • MC² Motion Control Classrooms
    • Podcasts
    • Videos
    • Webinars
  • LEAP AWARDS
  • Leadership
    • 2022 Voting
    • 2021 Winners
  • Design Guide Library
  • Resources
    • 3D Cad Models
      • PARTsolutions
      • TraceParts
    • Digital Issues
      • Design World
      • EE World
    • Women in Engineering
  • Supplier Listings

Amplifier for Military, Commercial High-Power Amplifier Needs

By atesmeh | June 6, 2013

Share

Northrop Grumman Corporation has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications. This product represents the first commercial availability of a packaged, GaN-based component from the company.

“The APN180FP provides customers with a powerful, easy-to-use, high-frequency product that greatly expands the accessibility of Monolithic Microwave Integrated Circuits [MMICs]. Initial engineering evaluation sampling of prototypes is underway. Preproduction quantities will be available later this summer,” said Frank Kropschot, general manager of the Microelectronics Products and Services business unit of Northrop Grumman Aerospace Systems.

“This amplifier is produced in Northrop Grumman’s advanced microelectronics wafer fabrication facility in Manhattan Beach, Calif., which has provided large volumes of compound semiconductor products to both military and commercial customers for more than 20 years,” Kropschot said. “We are targeting the APN180FP for the growing Ka-band satellite communication terminal and the commercial wireless infrastructure markets.”

Product description:

  • The APN180FP is a 0.2 mm GaN HEMT MMIC power amplifier chip mounted in a flange mount package. It operates at between 27 and 31 GHz and is optimized for operation between 29-31 GHz.
  • This power amplifier operates with a drain voltage of +28V and provides 21 dB of linear gain, +37 dBm (5.0 W) of output power at 1 dB gain compression and +39 dBm (8 W) in saturation with Power Added Efficiency (PAE) of 26 percent at midband.
  • For less-demanding applications, the APN180FP can be operated from a drain voltage as low as +20V while still producing +37 dBm (5 W) of saturated output power.
  • Samples are available now.
  • Preproduction quantities will be available in July.
  • Production quantities will be available in the fourth quarter of 2013.

“This new product is a follow on to the GaN MMICs we released in November 2012, and is the first of several package and module products we plan to introduce during the next few months,” Kropschot  aid.

“It’s based on MMICs using Northrop Grumman’s 0.2um GaN HEMT process developed partially under the Defense Advanced Research Projects Agency’s Wide Band Gap Semiconductors for Radio Frequency program,” Kropschot said. The agency’s program was the first of several key GaN technology development contracts awarded to Northrop Grumman beginning in 2002.


Filed Under: M2M (machine to machine)

 

Related Articles Read More >

Part 6: IDE and other software for connectivity and IoT design work
Part 4: Edge computing and gateways proliferate for industrial machinery
Part 3: Trends in Ethernet, PoE, IO-Link, HIPERFACE, and single-cable solutions
Machine Learning for Sensors

DESIGN GUIDE LIBRARY

“motion

Enews Sign Up

Motion Control Classroom

Design World Digital Edition

cover

Browse the most current issue of Design World and back issues in an easy to use high quality format. Clip, share and download with the leading design engineering magazine today.

EDABoard the Forum for Electronics

Top global problem solving EE forum covering Microcontrollers, DSP, Networking, Analog and Digital Design, RF, Power Electronics, PCB Routing and much more

EDABoard: Forum for electronics

Sponsored Content

  • Global supply needs drive increased manufacturing footprint development
  • How to Increase Rotational Capacity for a Retaining Ring
  • Cordis high resolution electronic proportional pressure controls
  • WAGO’s custom designed interface wiring system making industrial applications easier
  • 10 Reasons to Specify Valve Manifolds
  • Case study: How a 3D-printed tool saved thousands of hours and dollars

Design World Podcasts

May 17, 2022
Another view on additive and the aerospace industry
See More >
Engineering Exchange

The Engineering Exchange is a global educational networking community for engineers.

Connect, share, and learn today »

Design World
  • Advertising
  • About us
  • Contact
  • Manage your Design World Subscription
  • Subscribe
  • Design World Digital Network
  • Engineering White Papers
  • LEAP AWARDS

Copyright © 2022 WTWH Media LLC. All Rights Reserved. The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media
Privacy Policy | Advertising | About Us

Search Design World

  • Home
  • Technologies
    • 3D CAD
    • Electronics • electrical
    • Fastening & Joining
    • Factory automation
    • Linear Motion
    • Motion Control
    • Test & Measurement
    • Sensors
    • Fluid power
  • Learn
    • Ebooks / Tech Tips
    • Engineering Week
    • Future of Design Engineering
    • MC² Motion Control Classrooms
    • Podcasts
    • Videos
    • Webinars
  • LEAP AWARDS
  • Leadership
    • 2022 Voting
    • 2021 Winners
  • Design Guide Library
  • Resources
    • 3D Cad Models
      • PARTsolutions
      • TraceParts
    • Digital Issues
      • Design World
      • EE World
    • Women in Engineering
  • Supplier Listings