Integra Technologies offers a GaN power transistor, best suited for L-band avionics. IGN1011L1200 is a GaN-on-SiC HEMT technology, offers 1.03 – 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4% duty factor. With typical >17dB gain and 75% efficiency, IGN1011L1200 is a GEN-2 device. Assembled via chip…
Avionic IFF Transistor Offers 120 W Peak Output Power
Integra Technologies offers an IFF avionics transistor offering 120 W peak output power using GaN/SiC technology. Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 – 1.09 GHz, and supplies a minimum of 120 W of peak pulse power, at…