Integra Technologies offers an IFF avionics transistor offering 120 W peak output power using GaN/SiC technology.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 – 1.09 GHz, and supplies a minimum of 120 W of peak pulse power, at 50 V bias voltage and 6.4 percent duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
This 100 percent high power RF tested transistor for new designs has 17 dB of gain and a drain efficiency of 75 percent at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4 percent duty cycle.
Filed Under: Aerospace + defense