Two gallium nitride (GaN) high electron mobility transistors (HEMT) promise to solve several long-standing issues for radar systems using traditional travelling wave tube (TWT) amplifiers. GaN-based solid-state amplifiers operating at 50 V are not prone to the failures seen with high voltage (kV) TWT power supplies, and thus have longer lifetimes. Also, these transisters have near instant on capability—with no warm up—and have longer detection ranges and improved target discrimination.
Conceived to enable these benefits, these two GaN RF transistors were engineered to deliver high power and efficiency in a small package size. The first device, a 350-W/50-Ω fully matched GaN HEMT is the highest power C-Band transistor available on the market. The second, a 500-W/50-Ω GaN HEMT, is the highest power S-Band transistor fully matched to 50 Ω in a single-ended package of its size.
According to the manufacturer, the C- and S-Band products break power records for GaN power and efficiency performance housed in a small 50-Ω package. This efficient power enables the economical combination of transistors to achieve multi-kilowatt power amplifiers required for defense, weather and air traffic control radar.
Offering pulsed saturated power performance typically greater than 400 W, the CGHV59350 is most often used in ground-based defense and Doppler weather radar systems. The 50-Ω, fully matched GaN HEMT operates over a 5.2 to 5.9 GHz bandwidth, exhibits 60% typical drain efficiency, and is packaged in an industry standard 0.7 x 0.9 in. ceramic/metal flange package.
Delivering 700 W of typical saturated RF pulsed power, the CGHV31500F is offered for air traffic control radar systems. The 50-Ω, fully matched GaN HEMT operates over a 2.7 to 3.1 GHz bandwidth, exhibits 12 dB power gain, and is packaged in an industry standard
0.7 x 0.9 in. ceramic/metal flange package.
Filed Under: TECHNOLOGIES + PRODUCTS, Power supplies