RFMW (San Jose, CA) announces design and sales support for an LDMOS power transistor internally matched for broadband operation from 2,400 to 2,500 MHz. NXP’s BLF2425M7LS140 provides 140 W average CW power with 18.5 dB of gain. The BLF2425M7LS140 draws 1.3 A from a 28 V supply with efficiencies up to 52 percent. Housed in a ceramic package with solder ears, the BLF2425M7LS140 is a highly rugged transistor for industrial heating applications. NXP provides a range of high power transistors for the industrial, scientific and medical (ISM) band centered at 2,450 MHz. NXP solid state RF amplifiers enable highly reliable, more efficient and more controllable clean power sources for RF plasma, industrial drying and cooking when compared to alternatives such as magnetrons.

For more information visit www.rfmw.com and www.nxp.com.