RF power amplifier optimized for 20 to 1000 MHz operation

[[{“fid”:”34077″,”view_mode”:”media_original”,”type”:”media”,”attributes”:{“height”:300,”width”:300,”style”:”float: right; margin: 5px;”,”title”:”NPA1006″,”class”:”media-element file-media-original”}}]]Richardson RFPD today announces availability and full design support capabilities for a new 28V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.

The NPA1006 is a wideband GaN power amplifier optimized for 20 to 1000 MHz operation. This device has been designed for saturated and linear operation with output power levels to 15W (41.8 dBm) in an industry-standard surface mount DFN6X5-8 plastic package. It is versatile for a range of broadband applications, including test and measurement, defense communications, land mobile radio (LMR), and wireless infrastructure.

Key features of the NPA1006 include:
• Broadband operation from 20-1000 MHz
• 28V operation
• Input matched to 50 ohms
• Industry-standard QFN plastic package
• High drain efficiency (>50%)

More information is available online at www.richardsonrfpd.com.

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Filed Under: Aerospace + defense

 

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