RFMW (San Jose, CA) has announced design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. Features include:

• 63% PAE at 8V and 517mA Idss.
• Silicon nitride, protective overcoat layer, providing environmental robustness and scratch protection.
• 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach.

For more information, visit www.rfmw.com.