Skyworks Solutions (Woburn, MA) has introduced a 0.7-1.2 gigahertz, single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations. Features include:

• Low noise figure and high linearity.
• Excellent return loss and gain flatness in a small 2×2 mm, no lead plastic package. 
• On-die active bias design ensures consistent performance and enables unconditional stability with a 5V supply. 
• Rugged cascode design achieves nearly 19 dBm IIP3, 0.5 dB noise figure, and >20 dB gain. 
• Bias circuit allows the device current to be set independently from the Vdd supply, enabling optimal efficiency for a wide range of applications.

For more information, visit www.skyworksinc.com