Wolfspeed, A Cree Company, continues its innovation in silicon carbide (SiC) power device technology and packaging with the introduction of the industry’s first 1700V SiC MOSFET offered in…
High power RD devices solve TWT radar issues
Two gallium nitride (GaN) high electron mobility transistors (HEMT) promise to solve several long-standing issues for radar systems using traditional travelling wave tube (TWT) amplifiers. GaN-based solid-state amplifiers operating at 50 V are not prone to the failures seen with high voltage (kV) TWT power supplies, and thus have longer lifetimes. Also, these transisters have…
Doherty PA reference design for small cell wireless
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to…
The post Doherty PA reference design for small cell wireless appeared first on Analog IC Tips.
Cree MOSFET, Schottky diode design kit
Cree, Inc. has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable…
New GaN HEMT power devices work at 50 V
Cree, Inc., a global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor…
Spice model for SiC MOSFETs
Cree, Inc., has expanded the company’s design-in support for the C2M Series SiC MOSFET power devices with the release of a new SPICE model. Fast and accurate, the…
20-A SiC module targets15-kW 3-phase apps
Cree, Inc. (Nasdaq: CREE) has expanded the award-winning silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module ideally suited for 5-15 kW…
GaN HEMTs hit 6 GHz
Cree, Inc., a global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50V discrete GaN high electron mobility transistor…
Half-bridge SiC power module handles 1.7 kV
Cree, Inc. (Nasdaq: CREE) continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard…
SiC MOSFETs will power solar inverters
Cree, Inc. (Nasdaq: CREE) has announced that its C2M™, 1200V, 80mOhm SiC MOSFETs have been selected by Sanix Corporation, Japan, to be designed into their new 9.9kW three-phase…
New Cree Power Module Breaks Price-Performance Barrier
Cree’s silicon-carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in industry-standard 62mm housing,…
Cree has Introduced the Industrys First Commercial Silicon Carbide
The new MOSFET, designated the C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction heating systems, EV charging systems, and medical CT…
All SiC three-phase power module alleviates conventional design constraints
Reducing energy consumption is critical in many part designs. This commercially available silicon carbide (SiC) six-pack power module, CCS050M12CM2, is in an industry standard 45 mm package. As a replacement for a silicon module with equivalent ratings, this module can reduce power losses by 75%, which reduces the size of the heat sink by 70%…