By Andrew Zistler | March 28, 2016Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50%… Power Electronic Tips