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The First 50V GaN Set To Be Unveiled

By Wolfspeed | June 6, 2017

Wolfspeed’s CMPA2735015S is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a 5×5 mm Surface Mount QFNL-32 package.

Peak Output Power 15 W
Application L-Band / S-Band / X-Band / C-Band / Ku-Band
Typical Power Added Efficiency PAE 50%
Typical Power (PSAT) 15 W
Operating Voltage 50 V
Frequency 2.7 – 3.5 GHz
Package Type Surface Mount QFNL-32
Small Signal Gain 32 dB
Size 5×5 mm

To learn more click here.

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Filed Under: M2M (machine to machine)

 

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    • Warehouse automation
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