ROHM Semiconductor announced the release of two new 80-milliohm 1200V SiC (Silicon Carbide) MOSFETs, designated SCT2080KE and SCH2080KE, that are designed to deliver cost-effective, breakthrough performance. The SCH2080KE is the first SiC MOSFET co-packaged with a discrete anti-parallel SiC Schottky Barrier Diode (SBD), and features a forward voltage three times smaller than that of the body diode. The combination of excellent switching performance, low on resistance, and high breakdown voltage make these devices ideal replacements for silicon power MOSFETs and IGBTs in solar inverter, DC-DC converter, UPS and motor drive applications.
ROHM SiC MOSFETs offer as much as 90% lower switching loss compared to silicon devices thanks to the absence of tail current and the diode’s fast recovery performance. This allows designers to increase switching frequency to reduce size, cost, and weight of passives. Furthermore, these benefits enable the design of higher efficiency systems by implementing simpler, less expensive cooling systems.
ROHM’s SiC MOSFETs help customers save board space, simplify layout, and reduce BOM costs, said David Doan, Senior Product Marketing Manager at ROHM Semiconductor. Importantly, ROHM’s SiC MOSFETs are free from issues related to gate oxide breakdown, Vth stability, and degradation of the body diode during reverse conduction.
The SCT2080KE and SCH2080KE MOSFETs are available now in mass production quantities. ROHM Semiconductor has plans to expand its SiC MOSFET product line with lower on resistance and higher breakdown voltage models.
Filed Under: Power Electronic Tips