Yueying Liu, Senior Manager, RF Device Modeling and Device Characterization, Wolfspeed PhD, Solid State Physics and Microelectronics, North Carolina State University, 2009 Yueying Liu achieved her PhD in Solid State Physics and Microelectronics from North Carolina State University in 2009. Her PhD thesis focused on large-signal physics and AlGaN/GaN HEMT device modeling in collaboration with…
Women in Engineering — Dr. Kristen Parrish
Kristen N. Parrish, PhD, Silicon Carbide Systems Engineer, Wolfspeed Business Unit • PhD Electrical Engineering, The University of Texas at Austin, 2013 • MS Electrical Engineering, The University of Texas at Austin, 2010 • BS Electrical Engineering, Rose-Hulman Institute of Technology, 2008 Kristen Parrish is a Silicon Carbide Systems Engineer for Cree | Wolfspeed based…
Wolfspeed introduces 50V plastic GaN HEMTs for LTE & radar
Wolfspeed, a Cree Company and a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT…
The post Wolfspeed introduces 50V plastic GaN HEMTs for LTE & radar appeared first on Analog IC Tips.
Surface-mount SiC MOSFET for auxiliary power circuits
Wolfspeed, A Cree Company, continues its innovation in silicon carbide (SiC) power device technology and packaging with the introduction of the industry’s first 1700V SiC MOSFET offered in…
