Cree (Raleigh, NC) has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2–1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Featuring the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1,800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. Features include:

• Excellent power and small signal performance.
• Internally pre-matched on the input.
• Ceramic/metal flange and pill packages much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility. 

For more information, visit www.cree.com.