Festo lowers wafer oxidation risk with new N2 Purge System

The new Festo N2 purge system for silicon wafer manufacture significantly reduces the risk of oxidation caused by particle contamination. This Festo system is suitable for Front Opening Unified Pod (FOUP) applications by maintaining a consistent, low-particle nitrogen supply. It is the latest Festo innovation for automation in the semiconductor industry.

The unit’s peak particle size per switching cycle approximates 0.1 μm, which is about five times smaller than most N2 purge systems. Closed-loop control ensures an accurate, stable, and linear flow rate — without hysteresis. Repetition accuracy is rated at +/-0.25% of setpoint.

Low-friction piezo technology prolongs service life and minimizes maintenance. A power requirement of less than one watt reduces energy consumption by about 80% compared to proportional flow regulators. For reduced risk of leakage, this compact purge system has only two pneumatic connections. No assembly, testing, or additional stainless-steel tubing and fittings are required.